NTHS5441T1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTHS5441T1G
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT P-Channel number of channels:1 1.3 W -20 V Continuous Drain Current (ID):3.9 A 22 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 3.1 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 4.535924 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -3.9 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Number of Channels | 1 |
| Input capacitance | 710 pF |
| Continuous Drain Current (ID) | 3.9 A |
| Rds On Max | 46 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 14 ns |
| Turn-Off Delay Time | 42 ns |
| Element Configuration | Single |
| Rise Time | 22 ns |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 46 mΩ |
| Nominal Vgs | -1.2 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||